unisonic technologies co., ltd ut8205a power mosfet www.unisonic.com.tw 1 of 3 copyright ? 2009 unisonic technologies co., ltd qw-r502-287.b n-channel enhancement mode ? description the ut8205a uses advanced technology to provide fast switching, low on-resistance and co st-effectiveness. this device is suitable for all commercial-industri al surface mount applications. ? features * r ds(on) 28m ? @ v gs = 4.5 v * ultra low gate charge ( typical 23 nc ) * low reverse transfer capacitance ( c rss = typical 150 pf ) * fast switching capability * avalanche energy specified * improved dv/dt capability, high ruggedness ? symbol g2 g1 s1 s2 d ? ordering information ordering number pin assignment lead free halogen-free package 12345678 packing ut8205al-ag6-r UT8205AG-AG6-R sot-26 s1 d s2 g2 d g1 - - tape reel ut8205al-s08-r ut8205ag-s08-r sop-8 d s1 s1 g1 g2 s2 s2 d2 tape reel ut8205al-p08-r ut8205ag-p08-r tssop-8 d s1 s1 g1 g2 s2 s2 d2 tape reel (1) r: tape reel (2) ag6: sot-26, p08:tssop-8 s08:sop-8 (3) g: halogen free, l: lead free ut8205al -ag6 -r (1) packing type (2) package type (3) lead plating ? marking for sot-26
ut8205a power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-287.b ? absolute maximum ratings parameter symbol ratings unit drain-source voltage v dss 20 v gate-source voltage v gss 12 v continuous i d 6 a drain current (note 2) pulsed i dm 20 a sot-26 1.14 w power dissipation (ta=25c) (note 3) sop-8/tssop-8 p d 1 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only an d functional device operat ion is not implied. 2. pulse test : pulse width 300 s, duty cycle 2% 3. pulse width limited by t j(max) ? thermal data parameter symbol min typ max unit sot-26 110 c/w sop-8 78 c/w junction to ambient (note) tssop-8 ja 125 c/w note: pulse test : pulse width 300 s, duty cycle 2% ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =250a 20 v breakdown voltage temperature coefficient j dss t bv i d =1ma, reference to 25c 0.03 v/c drain-source leakage current i dss v ds =20v, v gs =0v, 1 a gate-source leakage current i gss v gs =8v 100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250a 0.5 1.5 v v gs =4.5v, i d =6.0a 28 m ? drain-source on-state resistance (note) r ds(on) v gs =2.5v, i d =5.2a 38 m ? dynamic parameters input capacitance c iss 1035 pf output capacitance c oss 320 pf reverse transfer capacitance c rss v ds =20v, v gs =0v, f=1.0mhz 150 pf switching parameters turn-on delay time (note) t d(on) 30 ns turn-on rise time t r 70 ns turn-off delay time t d(off) 40 ns turn-off fall-time t f v gs =5v, v ds =10v, r d =10 ? , r g =6 ? , i d =1a 65 ns total gate charge(note) q g 23 nc gate source charge q gs 4.5 nc gate drain charge q gd v ds =20v, v gs =5v, i d =6.0a 7 nc source- drain diode ratings and characteristics drain-source diode forward voltage (note) v sd i s =1.7a, v gs =0v 1.2 v diode continuous forward current i s v d =v g , v s =1.3v 1.54 a note: surface mounted on 1 in 2 copper pad of fr4 board; 208 c/w when mounted on min.
ut8205a power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-287.b ? typical characteristics drain current vs. drain-source breakdown voltage 0 drain current, i d (a) drain-source breakdown voltage, bv dss (v) 10 20 30 0 5 15 25 50 100 150 200 250 300 0.2 0 0 drain current vs. gate threshold voltage drain current, i d (a) gate threshold voltage, v th (v) 0.6 1.0 100 150 200 0.4 0.8 1.2 50 250 300 0 source to drain voltage, v sd (v) 0 drain current, i d (a) 0.2 0.6 0.4 0.8 0.4 0.8 1.2 1.6 2.0 0 drain-source on-state resistance characteristics drain current, i d (a) drain to source voltage, v ds (mv) 50 100 150 200 0 250 1 2 3 4 5 6 7 300 v gs =2.5v i d =5.2a v gs =4.5v i d =6a drain current vs. source to drain voltage 1.0 0.2 0.6 1.0 1.4 1.8
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